Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-oxide-Semiconductor Field-Effect Transistors Containing Step Bunching

• Kin Kiong Lee

• Takeshi Oshima

• Akihiko Ohi

Bibliographic Information

Other Title

• Anomalous Increase in Effective Channel Mobility on Gamma Irradiated p Channel SiC Metal oxide Semiconductor Field Effect Transistors Containing Step Bunching

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (9A), 6830-6836, 2006-09

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• silicon carbide
• MOSFET
• radiation-induced interface traps
• radiation-induced oxide-trapped charge
• effective channel mobility
• surface roughness

Details

• CRID: 1520009408955275392
• NII Article ID: 10018245308
• NII Book ID: AA10457675
• ISSN: 00214922
• NDL BIB ID: 8055293
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8055293
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles