Novel Structure and Fabrication Process for Integrated RF Microelectromechanical-System Technology

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著者

    • Kuwabara Kei Kuwabara Kei
    • NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Urano Masami Urano Masami
    • NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Sato Norio
    • NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Morimura Hiroki
    • NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Sakata Tomomi
    • NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Ishii Hiromu
    • NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Kamei Toshikazu
    • NTT Advanced Technology Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Kudou Kazuhisa
    • NTT Advanced Technology Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Yano Masaki
    • NTT Advanced Technology Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Machida Katsuyuki
    • NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

抄録

This paper describes a novel structure and fabrication process for the integration of several types of RF microelectromechanical-system (MEMS) device, such as switches and varactors having different structures. It also describes an encapsulation technique suitable for the integrated devices to protect movable parts during packaging. An adaptable multilayer structure and its fabrication process, which includes planarization with photosensitive polyimide, are proposed for integration. A capsule structure fabricated using spin-coating film transfer and hot-pressing technology is also proposed for protection. Several types of RF MEMS device were simultaneously fabricated on the same substrate using these techniques. The results confirm that these techniques will pave the way for the development of single-chip RF transceivers with integrated RF MEMS devices.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6849-6853, 2006-09-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

参考文献:  9件

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被引用文献:  5件

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各種コード

  • NII論文ID(NAID)
    10018245372
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8055346
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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