Small-Signal and Noise Model of Fully Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Devices for Low-Noise Amplifier
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An RF small-signal and noise model of fully depleted silicon-on-insulator (FD-SOI) metal–oxide–semiconductor field effect transistor (MOSFET) is presented. The model together with its intrinsic model parameters extracted from de-embedding extrinsic parameters reproduces the frequency and noise response of FD-SOI MOSFETs. We have applied the proposed model to a low-noise amplifier (LNA) operating at 5.5 GHz, which is implemented in a 0.15 μm FD-SOI complementary metal–oxide–semiconductor (CMOS) technology. The simulated small-signal and noise performance of the LNA are in good agreement with the measured data of the fabricated LNA.
- Jpn J Appl Phys
Jpn J Appl Phys 45(9A), 6872-6877, 2006-09-15
INSTITUTE OF PURE AND APPLIED PHYSICS