# Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion

## 抄録

In this study, transmission electron microscopy was employed to investigate the characteristics of threading dislocations (TDs) in GaN films grown on the (0001) sapphire substrates with or without the insertion of Al0.3Ga0.7N (2 nm)/GaN (2 nm) short period superlattices (SPSLs). By using $\mathbf{g}\cdot\mathbf{b} = 0$ invisibility criterion, it was found that most of the TDs were type a TDs in a GaN film either containing SPSL or having no SPSL insertion. Type $\textbf{a} + \textbf{c}$ TDs were found to nucleate through the interactions between type a and type c TDs in GaN near the GaN/sapphire interface. Some of the type a TDs were observed to bend along GaN basal plane because of the influence of biaxial strain near the GaN/SPSL interface.

## 収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6888-6892, 2006-09-15

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

## 各種コード

• NII論文ID(NAID)
10018245562
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
ART
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
8055555
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  NDL  JSAP

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