Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion

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著者

    • Wang Wei-Lin Wang Wei-Lin
    • Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan, Republic of China
    • Liao Wei-Tsai
    • Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan, Republic of China
    • He Ju-Liang
    • Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan, Republic of China
    • Chi Yuan-Chen
    • Precision Instrument Support Center, Feng Chia University, Taichung 407, Taiwan, Republic of China
    • Shi Jen-Bin
    • Precision Instrument Support Center, Feng Chia University, Taichung 407, Taiwan, Republic of China

抄録

In this study, transmission electron microscopy was employed to investigate the characteristics of threading dislocations (TDs) in GaN films grown on the (0001) sapphire substrates with or without the insertion of Al0.3Ga0.7N (2 nm)/GaN (2 nm) short period superlattices (SPSLs). By using $\mathbf{g}\cdot\mathbf{b} = 0$ invisibility criterion, it was found that most of the TDs were type a TDs in a GaN film either containing SPSL or having no SPSL insertion. Type $\textbf{a} + \textbf{c}$ TDs were found to nucleate through the interactions between type a and type c TDs in GaN near the GaN/sapphire interface. Some of the type a TDs were observed to bend along GaN basal plane because of the influence of biaxial strain near the GaN/SPSL interface.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6888-6892, 2006-09-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018245562
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8055555
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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