Effect of Hydrogen on Secondary Grain Growth of Polycrystalline Silicon Films by Excimer Laser Annealing in Low-Temperature Process
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The effect of hydrogen on the crystallization of amorphous silicon (a-Si) by excimer laser annealing was investigated for a-Si films deposited on silicon nitride (SiNx) films. The effect of hydrogen atoms provided from SiNx films at various hydrogen concentrations was particularly studied. As hydrogen concentration increases, the grain size of polycrystalline silicon (poly-Si) films increases. It is found that high-quality poly-Si films are obtained at a low laser energy density by controlling the hydrogen concentration in the SiNx films and the laser energy density.
- Jpn J Appl Phys
Jpn J Appl Phys 45(9A), 6908-6910, 2006-09-15
INSTITUTE OF PURE AND APPLIED PHYSICS