High-Voltage p-Channel Level Shifter Using Charge-Controlled Self-Isolation Structure
In this paper, we report an area-effective 600 V p-channel level shifter using a self-isolation structure without the degradation of blocking capability for the first time. To prevent the degradation of high-voltage isolation performance, the charge in a double reduced surface electric field (RESURF) structure is controlled at the border region between a high-voltage p-channel metal oxide semiconductor field effect transistor (MOSFET) and a high-voltage isolation region. Because of a divided p-offset region in the drift region of the high-voltage p-channel MOSFET and the high-voltage isolation region, parasitic current to the ground (GND) terminal through the isolation region can be ignored. By using the new high-voltage p-channel level shifter, a 400 V level shift operation is confirmed.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6914-6916, 2006-09-15
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics