High-Voltage p-Channel Level Shifter Using Charge-Controlled Self-Isolation Structure

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In this paper, we report an area-effective 600 V p-channel level shifter using a self-isolation structure without the degradation of blocking capability for the first time. To prevent the degradation of high-voltage isolation performance, the charge in a double reduced surface electric field (RESURF) structure is controlled at the border region between a high-voltage p-channel metal oxide semiconductor field effect transistor (MOSFET) and a high-voltage isolation region. Because of a divided p-offset region in the drift region of the high-voltage p-channel MOSFET and the high-voltage isolation region, parasitic current to the ground (GND) terminal through the isolation region can be ignored. By using the new high-voltage p-channel level shifter, a 400 V level shift operation is confirmed.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6914-6916, 2006-09-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018245682
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8055665
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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