Transport Characteristic Control of Field-Effect Transistors with Single-Walled Carbon Nanotube Films Using Electrode Metals with Low and High Work Functions
We have fabrficated field-effect transistors with single-walled carbon nanotube films using various work-function metals (Mg, Al, Ti, and Ni) as the source and drain electrodes to control the transfer characteristic. The $n$-type transfer characteristic is obtained from the device with low-work-function metal (Mg), and the $ p$-type characteristic is obtained from the device with medium- and high-work-function metals (Al, Ti, and Ni). The ambipolar characteristic of the device with Mg electrodes in air is converted to the $n$-type characteristic by maintaining in vacuum. The device with Mg as a drain electrode and Ni as a source electrode shows the ambipolar characteristic at small and large drain–source voltages. This device might be able to simultaneously inject electrons and holes into a SWNT.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 7234-7236, 2006-09-15
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics