Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy

• Muto Shunsuke

  Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University

• Enomoto Naruaki

  Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University

抄録

Internal structures of surface blisters and their precursors in Si formed by H⁺, D⁺ and He⁺ irradiation were examined by cross-sectional transmission electron microscopy (XTEM). The skin structures of H⁺-D⁺- and He⁺-blisters reflected the difference in the damage accumulation, and chemical interaction between the implant ion and silicon. These differences had a direct influence on the defect structures of the damaged layer, which played essential roles in the blistering mechanisms. It was found that blister skin thickness derived by grazing incidence electron microscopy (GIEM) and electron energy-loss spectroscopy (EELS) was underestimated compared to direct measurement by XTEM. The origin of this discrepancy is discussed.

収録刊行物

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 46 (10), 2117-2124, 2005

  公益社団法人 日本金属学会

キーワード

• blister
• silicon
• cross-sectional transmission electron microscopy
• plastic deformation
• ion irradiation
• electron energy-loss spectroscopy
• hydrogen
• helium

詳細情報

• CRID: 1390282679227617664
• NII論文ID: 130004452598
• NII論文ID: 10018277373
• NII書誌ID: AA1151294X
• DOI: 10.2320/matertrans.46.2117
• ISSN: 13475320
• ISSN: 13459678
• NDL書誌ID: 7487665
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7487665
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/46/10/46_10_2117/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可