Evaluation of Interface Trap Density in a SiGe/Si Heterostructure Using a Charge Pumping Technique and Correlation between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs

• TSUCHIYA T.

収録刊行物

• Proc. of the ESSDERC, Firenze, Italy, 2002-9

  Proc. of the ESSDERC, Firenze, Italy, 2002-9 2002

詳細情報

• CRID: 1570291225426305280
• NII論文ID: 10018312318
• データソース種別:
  • CiNii Articles