Control of strain and dislocation structures in Ge_<1-x>Sn_x buffer layers on virtual Ge substrates

• TAKEUCHI Shotaro

  Nagoya University

• SAKAI Akira

  Nagoya University

• NAKATSUKA Osamu

  Nagoya University

• OGAWA Masaki

  Nagoya University

• ZAIMA Shigeaki

  Nagoya University

Bibliographic Information

Other Title

• 仮想Ge基板上におけるGe_<1-x>Sn_xバッファ層の歪および転位構造制御

Journal

• 電気学会研究会資料. EFM, 電子材料研究会

  電気学会研究会資料. EFM, 電子材料研究会 2006 (15), 19-24, 2006-10-03

Keywords

• Ge_<1-x>Sn_x
• Dislocation
• Strain-relaxation

Details

• CRID: 1570854175379728384
• NII Article ID: 10018312345
• NII Book ID: AN10442556
• Text Lang: ja
• Data Source:
  • CiNii Articles