A new strained-SOI/GOI dual CMOS technology based on local condensation technique

• TEZUKA T.

収録刊行物

• Digest of Technical Papers of Symposium on VLSI Technology, 2005

  Digest of Technical Papers of Symposium on VLSI Technology, 2005 2005

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• CRID: 1572261550263632000
• NII論文ID: 10018318339
• データソース種別:
  • CiNii Articles