SiGeアノード層を用いた高速リカバリ pin ダイオード [in Japanese] Fast-Recovery Pin Diodes with SiGe Anode Layers [in Japanese]
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Fast-recovery and low on-state-forward-voltage drop (V<sub>f</sub>) in pin-diodes can be simultaneously obtained with a relaxed SiGe crystal anode layer. We have successfully fabricated 280V-class SiGe pin diodes with a recovery time of 160ns and V<sub>f</sub> of 0.86V at a forward current density of 100A/cm<sup>2</sup>. A device simulation predicts a possibility of V<sub>f</sub>=0.7V@100A /cm<sup>2</sup> and a recovery time of 20ns by controlling carrier lifetimes at p and i layers independently with SiGe.
- IEEJ Transactions on Electronics, Information and Systems
IEEJ Transactions on Electronics, Information and Systems 126(11), 1340-1343, 2006-11-01
The Institute of Electrical Engineers of Japan