Fast-Recovery Pin Diodes with SiGe Anode Layers

• Hirose Fumihiko

  Yamagata University

• Nagase Shinichi

  Graduate School of Science and Engineering, Yamagata University

Bibliographic Information

Other Title

• ＳｉＧｅアノード層を用いた高速リカバリｐｉｎダイオード
• SiGe アノードソウ オ モチイタ コウソク リカバリ pin ダイオード

Abstract

Fast-recovery and low on-state-forward-voltage drop (V_f) in pin-diodes can be simultaneously obtained with a relaxed SiGe crystal anode layer. We have successfully fabricated 280V-class SiGe pin diodes with a recovery time of 160ns and V_f of 0.86V at a forward current density of 100A/cm². A device simulation predicts a possibility of V_f=0.7V@100A /cm² and a recovery time of 20ns by controlling carrier lifetimes at p and i layers independently with SiGe.

Journal

• IEEJ Transactions on Electronics, Information and Systems

  IEEJ Transactions on Electronics, Information and Systems 126 (11), 1340-1343, 2006

  The Institute of Electrical Engineers of Japan

Keywords

• SiGe
• pin diode
• recovery

Details

• CRID: 1390001204603981440
• NII Article ID: 10018318357
• NII Book ID: AN10065950
• DOI: 10.1541/ieejeiss.126.1340
• ISSN: 13488155
• ISSN: 03854221
• NDL BIB ID: 8560330
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8560330
• Web Site: http://www.jstage.jst.go.jp/article/ieejeiss/126/11/126_11_1340/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed