Formation of Nanoparticles by Control of Electron Temperature in Hollow-Typed Magnetron Radio Frequency CH4/H2 Plasma

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著者

    • Emi Junichi Emi Junichi
    • Department of Electrical Engineering, Graduate School of Engineering, Tohoku University, 6-6-05 Aoba-yama, Aoba-ku, Sendai 980-8579, Japan
    • Iizuka Satoru
    • Department of Electrical Engineering, Graduate School of Engineering, Tohoku University, 6-6-05 Aoba-yama, Aoba-ku, Sendai 980-8579, Japan

抄録

In this study, we investigate the effects of electron temperature $T_{\text{e}}$ on the production of nanoparticles by using the grid-biasing method in hollow-typed magnetron radio frequency (RF) CH4/H2 plasma. We find that nanoparticles are produced in low-$T_{\text{e}}$ plasma. On the other hand, thin film depositions, such as nanowalls, are mainly observed and almost no nanoparticles are created in high-$T_{\text{e}}$ plasma. This implies that a reduction in the CH2/CH3 radical ratio is important for producing nanoparticles, together with a reduction in sheath potential in front of the substrate. The change in electron temperature in plasma has a marked effect on film quality.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8071-8074, 2006-10-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018338858
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8519939
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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