Study of Spatial Distribution of SiH3 Radicals in Very High Frequency Plasma Using Cavity Ringdown Spectroscopy

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著者

    • Nagai Takehiko Nagai Takehiko
    • Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8567, Japan
    • Smets Arno H. M. Smets Arno H. M.
    • Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8567, Japan
    • Kondo Michio Kondo Michio
    • Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8567, Japan

抄録

Time-resolved cavity ringdown ($\tau$-CRD) spectroscopy has been applied to measure the SiH3 radical density profile between the electrodes in a pulsed SiH4/H2 very high frequency (VHF) plasma under μc-Si:H deposition conditions. On time scales smaller than ${\sim}1$ s, cavity loss reflects the light absorption by SiH3 radicals, whereas on time scales larger than ${\sim}1$ s, an additional cavity loss due to light scattering at Si clusters and dust particles, generated in the pulsed SiH4/H2 VHF plasma, is observed. From the measurements of the spatial distribution of SiH3 radicals between electrodes, the incident SiH3 radical flux to the electrode surface is determined, which reveals a significant contribution of SiH3 radicals to μc-Si:H thin film growth.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8095-8098, 2006-10-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018338931
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8519964
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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