# Study of Spatial Distribution of SiH3 Radicals in Very High Frequency Plasma Using Cavity Ringdown Spectroscopy

## 抄録

Time-resolved cavity ringdown ($\tau$-CRD) spectroscopy has been applied to measure the SiH3 radical density profile between the electrodes in a pulsed SiH4/H2 very high frequency (VHF) plasma under μc-Si:H deposition conditions. On time scales smaller than ${\sim}1$ s, cavity loss reflects the light absorption by SiH3 radicals, whereas on time scales larger than ${\sim}1$ s, an additional cavity loss due to light scattering at Si clusters and dust particles, generated in the pulsed SiH4/H2 VHF plasma, is observed. From the measurements of the spatial distribution of SiH3 radicals between electrodes, the incident SiH3 radical flux to the electrode surface is determined, which reveals a significant contribution of SiH3 radicals to μc-Si:H thin film growth.

## 収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8095-8098, 2006-10-30

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

## 各種コード

• NII論文ID(NAID)
10018338931
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
ART
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
8519964
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  NDL  JSAP

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