Unique Point on Langmuir Probe Characteristics under Influence of Potential Fluctuations

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著者

    • Goto Makoto Goto Makoto
    • Department of Electronic Engineering, Kanto Polytechnic College, 612-1 Yokokyra-Mitake, Oyama, Tochigi 323-0813, Japan
    • Sheng Min
    • Saitama Plant, TOKO, Inc., 18 Oaza Gomigaya, Tsurugashima, Saitama 350-2281, Japan
    • Okada Tomio
    • Department of Informational Engineering, Maebashi Institute of Technology, 460-1 Kamisadori, Maebashi 371-0816, Japan

抄録

A unique point is observed on Langmuir probe characteristics when sinusoidal potential fluctuations with frequencies less than ion plasma frequency are applied. When a direct current (DC) voltage is applied to the probe, current does not change at different sinusoidal radio frequency fluctuation amplitudes. The difference between the DC voltage at this point and that at a point in plasma space is approximately one-half the electron temperature. To analyze this point, Monte Carlo simulations are performed. It is found that an ion density peak appears near the sheath edge when the positive probe potential decreases and it propagates toward the plasma when the probe potential is negative. It is concluded that this peak may be related to the plasma oscillation at the sheath edge and may govern the electron flow toward the probe.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8137-8140, 2006-10-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018339057
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8520096
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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