Simulation of the Electrical Properties of SiH4/H2 RF Discharges

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著者

    • Lyka B. Lyka B.
    • Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O. Box 1407, 26504 Patras, Greece
    • Mataras D. Mataras D.
    • Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O. Box 1407, 26504 Patras, Greece

抄録

The results of a two-dimensional fluid simulator were validated against the experimentally measured electrical properties (power dissipation and discharge current) of SiH4/H2 RF discharges used for the deposition of microcrystalline or amorphous silicon thin films. The use of the typical values for the electron–SiH4 and H2 collision cross sections found in the literature, results in a significant underestimation of the calculated power dissipated in the discharge and an overestimation of the current flow. A study of the main parameters affecting the model results showed that this deviation is mainly due to the H2 ionization rate. An improved calculation of the power dissipated in the discharge was then possible, leading to a significant improvement in the prediction of the deposition rate. This result underlines the importance of H2 chemistry in SiH4/H2 discharges and also indicates that the correct estimation of the discharge electrical properties is a necessary first step in the development of a code for simulating the deposition of silicon films from SiH4/H2 discharges.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8172-8176, 2006-10-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018339184
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8520506
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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