Polishing Characteristics of Silicon Carbide by Plasma Chemical Vaporization Machining

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著者

    • Yamauchi Kazuto
    • Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
    • Ishida Takeshi
    • Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
    • Arima Kenta
    • Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
    • Kubota Akihisa
    • Faculty of Engineering, Kumamoto University, 2-39-1 Kurokoami, Kumamoto 860-8555, Japan
    • Mori Yuzo
    • Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

抄録

Silicon carbide (SiC) is expected to be a promising semiconductor material for high-temperature, high-frequency, high-power and energy-saving applications. However, it is so hard and so chemically stable that there is no efficient method of machining it without causing damage to the machined surface. Plasma chemical vaporization machining (PCVM) is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. PCVM has a high removal rate equivalent to those of conventional machining methods such as grinding and lapping, because the radical density in atmospheric-pressure plasma is much higher than that in normal low-pressure plasma. In this paper, the polishing characteristics of silicon carbide by PCVM are described. As a result, a high machining rate (approximately 0.18 mm/min) and a very smooth surface (below 2 nm peak-to-valley in a 500 nm square area) are achieved.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8277-8280, 2006-10-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018339543
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8520785
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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