Highly Aligned Growth of Carbon Nanotubes by RF-Plasma-Assisted DC Plasma Chemical Vapor Deposition at High Pressure

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抄録

Very highly aligned carbon nanotubes (CNTs) were synthesized by radio-frequency-plasma-assisted direct current (DC) plasma chemical vapor deposition, which was developed for the large-area growth of highly aligned CNTs under a stable condition in a DC plasma. Three parallel electrodes, namely, an RF electrode, a grounded electrode, and a DC cathode, were arranged in a vacuum chamber. It was found that the application of a high DC voltage at a high pressure forms a high sheath electric field, resulting in the highly aligned growth of CNTs without severe damage.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8308-8310, 2006-10-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018339641
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8520910
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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