Modification of Double-Walled Carbon Nanotubes by Cs Plasma Ion Irradiation

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著者

    • Li Yongfeng Li Yongfeng
    • Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
    • Kato Toshiaki
    • Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
    • Hatakeyama Rikizo
    • Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
    • Qiu Jieshan
    • Department of Materials Science and Chemical Engineering, Dalian University of Technology, Dalian 116012, China

抄録

The synthesis of Cs-encapsulated double-walled carbon nanotubes (DWNTs) is realized for the first time by plasma irradiation. Transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) spectrometry confirm that Cs clusters can be doped inside DWNTs. The structural deformation of Cs-encapsulated DWNTs synthesized under different applied negative DC bias voltages from $-25$ to $-150$ V during plasma irradiation is examined by Raman spectroscopy, and the obtained results indicate that DWNTs have structural merits compared with single-walled carbon nanotubes (SWNTs). In addition, the electronic transport properties of pristine and Cs-encapsulated DWNTs are investigated by their fabrication as the channels of field-effect transistor (FET) devices. We find that, in contrast to pristine ambipolar DWNTs, unipolar $n$-type semiconducting DWNTs can be created by Cs plasma irradiation.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8330-8334, 2006-10-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018339737
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8521000
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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