Modification of Double-Walled Carbon Nanotubes by Cs Plasma Ion Irradiation
The synthesis of Cs-encapsulated double-walled carbon nanotubes (DWNTs) is realized for the first time by plasma irradiation. Transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) spectrometry confirm that Cs clusters can be doped inside DWNTs. The structural deformation of Cs-encapsulated DWNTs synthesized under different applied negative DC bias voltages from $-25$ to $-150$ V during plasma irradiation is examined by Raman spectroscopy, and the obtained results indicate that DWNTs have structural merits compared with single-walled carbon nanotubes (SWNTs). In addition, the electronic transport properties of pristine and Cs-encapsulated DWNTs are investigated by their fabrication as the channels of field-effect transistor (FET) devices. We find that, in contrast to pristine ambipolar DWNTs, unipolar $n$-type semiconducting DWNTs can be created by Cs plasma irradiation.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8330-8334, 2006-10-30
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics