Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors

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著者

    • Li Xu Li Xu
    • Nanoelectronics Research Centre, Department of Electrical and Electronics Engineering, Glasgow University, Glasgow, G12 8LT, Scotland, United Kingdom
    • Zhou Haiping Zhou Haiping
    • Nanoelectronics Research Centre, Department of Electrical and Electronics Engineering, Glasgow University, Glasgow, G12 8LT, Scotland, United Kingdom
    • Thayne Iain G.
    • Nanoelectronics Research Centre, Department of Electrical and Electronics Engineering, Glasgow University, Glasgow, G12 8LT, Scotland, United Kingdom

抄録

In this study, we investigate in situ optical emission spectra from plasma in the reactive ion etching (RIE) of tungsten, a suitable candidate for gate metallization in compound-semiconductor-based high-mobility channel devices. This results in a detailed understanding of the effects of etching parameters vital to reducing etch induced damage and improving etching performance. A SF6 based chemistry was used with other functional gases, such as N2, O2, and CHF3. Van de Pauw (VdP) structures on GaAs based high electron mobility transistor (HEMT) layer structures were used for evaluating plasma-induced damage in the RIE process. The optimised process results in a maximum increase of 15% in the sheet resistance of the semiconductor material. Etched tungsten line widths down to 25 nm with well controlled profile were obtained by adjusting the etching conditions based on the understanding of the etching mechanism.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8364-8369, 2006-10-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018339836
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8521113
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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