Effects of Plasma Power and Plasma Sheath on Field Emission Properties of Carbon Nanotubes

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著者

    • Ting Jyh-Hua Ting Jyh-Hua
    • National Nano Device Laboratories, No. 26, Prosperity Road I, Science-Based Industrial Park, Hsinchu, Taiwan 30078, R.O.C.
    • Su Chin-Yan Su Chin-Yan
    • Department of Mechanical Engineering, National Central University, Jung-da Road, Jung-li City, Taoyuan, Taiwan 32001, R.O.C.
    • Hsu Cho-Lun
    • National Nano Device Laboratories, No. 26, Prosperity Road I, Science-Based Industrial Park, Hsinchu, Taiwan 30078, R.O.C.
    • Samukawa Seiji
    • Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

抄録

With a nickel catalyst, carbon nanotubes (CNTs) were prepared by microwave plasma-enhanced chemical vapor deposition (MPCVD). Transmission electron microscopy (TEM) images reveal the center hollowness and multiwall structure of CNTs. The tip-growth mechanism of the CNTs prepared by MPCVD is confirmed by the Ni particles enclosed at the tips of the CNTs. The degree of CNT graphitization increases with plasma power up to about 1000 W and then reaches the upper limit. This is attributed to an insufficient carbon feedstock for CNT growth. The field emission (FE) efficiency of the CNTs increases with plasma power. For plasma powers not greater than 1000 W, the increase in graphitization degree and the decrease in the number of defects in a CNT emitter array enhance FE performance. The defects produced by the large split catalysts remaining in the CNTs at low plasma powers (700 and 800 W) also result in a low FE efficiency. Although the CNTs grown at moderate to high plasma powers (1000 to 1200 W) have similar graphitization degrees, a low plasma power results in split catalysts and hence defects, as evidenced by TEM observation. These defects accumulate electrons, block electronic transport, and hence reduce the FE efficiency of the CNTs. The effect of kinked CNTs produced by the a plasma sheath on FE efficiency is negligible.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8406-8411, 2006-10-30

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018339998
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8521198
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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