Electrical Properties of Low-Dielectric-Constant SiOC(–H) Films Prepared by Plasma-Enhanced Chemical Vapor Deposition from Methyltriethoxysilane and O2

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著者

    • Kim Seung Hyun
    • Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756, Korea
    • Jang Yong Jun
    • Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756, Korea
    • Jung An Su
    • Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756, Korea
    • Lee Heon Ju
    • Department of Mechanical, Energy and Production Engineering, Cheju National University, Jeju 690-756, Korea
    • Lee Kwang Man
    • Faculty of Electrical and Electronics Engineering, Cheju National University, Jeju 690-756, Korea
    • Choi Chi Kyu
    • Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756, Korea

抄録

SiOC(–H) films were deposited on a $ p$-type Si(100) substrate by plasma-enhanced chemical vapor deposition (PECVD) from methyltriethoxysilane (MTES) and oxygen precursors. The MTES/O2 flow rate ratio was varied from 40 to 100% to investigate its effect on the properties of the films. Film thickness and refractive index were measured by field-emission scanning electron microscopy (FESEM) and ellipsometry, respectively. The chemical structures of the SiOC(–H) films were characterized by Fourier transform infrared spectroscopy (FTIR) in the absorbance mode. The bonding configurations of the SiOC(–H) films remained the unchanged upon annealing, showing their good thermal stability. The electrical properties of the films were measured using a metal–insulator–semiconductor (MIS) Al/SiOC(–H)/$ p$-Si structure. The experimental lowest dielectric constant of the SiOC(–H) film was found to be 2.38 at an annealing temperature 500 °C and the film has excellent thermal stability up to 500 °C. The SiOC(–H) films deposited by MTES and O2 precursors are a promising material for next-generation Cu-interconnect technology.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8435-8439, 2006-10-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018340123
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8521260
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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