Electrical Properties of Low-Dielectric-Constant SiOC(–H) Films Prepared by Plasma-Enhanced Chemical Vapor Deposition from Methyltriethoxysilane and O2
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SiOC(–H) films were deposited on a $ p$-type Si(100) substrate by plasma-enhanced chemical vapor deposition (PECVD) from methyltriethoxysilane (MTES) and oxygen precursors. The MTES/O2 flow rate ratio was varied from 40 to 100% to investigate its effect on the properties of the films. Film thickness and refractive index were measured by field-emission scanning electron microscopy (FESEM) and ellipsometry, respectively. The chemical structures of the SiOC(–H) films were characterized by Fourier transform infrared spectroscopy (FTIR) in the absorbance mode. The bonding configurations of the SiOC(–H) films remained the unchanged upon annealing, showing their good thermal stability. The electrical properties of the films were measured using a metal–insulator–semiconductor (MIS) Al/SiOC(–H)/$ p$-Si structure. The experimental lowest dielectric constant of the SiOC(–H) film was found to be 2.38 at an annealing temperature 500 °C and the film has excellent thermal stability up to 500 °C. The SiOC(–H) films deposited by MTES and O2 precursors are a promising material for next-generation Cu-interconnect technology.
- Jpn J Appl Phys
Jpn J Appl Phys 45(10B), 8435-8439, 2006-10-30
INSTITUTE OF PURE AND APPLIED PHYSICS