Effect of Indium-Oxide Deposited Using an Oxygen Ion-Beam-Assisted-Deposition to Top-Emitting Organic Light-Emitting Diodes

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著者

    • Lim Jong Tae Lim Jong Tae
    • Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Chunchun-Dong, Jangan-Gu, Suwon 440-746, Korea
    • Kim Mi Suk
    • Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Chunchun-Dong, Jangan-Gu, Suwon 440-746, Korea
    • Bae Jeong Woon
    • Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Chunchun-Dong, Jangan-Gu, Suwon 440-746, Korea
    • Yeom Geun Young
    • Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Chunchun-Dong, Jangan-Gu, Suwon 440-746, Korea

抄録

Indium oxide thin films have potential applications as cathodes in top-emitting organic light-emitting diodes (TEOLEDs). This study examined the characteristics of transparent conducting indium oxide (IO) films deposited by an oxygen ion-beam-assisted-deposition (IBAD) as a function of the applied oxygen ion energy ($V_{\text{a}}$). When TEOLED devices consisting of glass/Ag (100 nm)/ITO (125 nm)/2-TNATA (30 nm)/NPB (15 nm)/Alq3 (55 nm)/LiF (1 nm)/Al (2 nm)/Au (20 nm)/IO (100 nm) were fabricated at a lower $V_{\text{a}}$, a lower turn-on voltage was observed even though the maximum luminance (32,000 cd/m2) was similar one another. A $V_{\text{a}}$ of approximately +50 V produced an IO film with a resistivity of $8.5\times 10^{-4}$ $\Omega$$\cdot$cm and a transmittance of 85%. The definition ($I$–$V$) characteristics of TEOLED devices with a cathode layer of Al (2 nm)/Au (20 nm)/IO (100 nm) were similar to the device fabricated with Al (2 nm)/Au (20 nm) only.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(10B), 8457-8461, 2006-10-30

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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キーワード

各種コード

  • NII論文ID(NAID)
    10018340207
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8521313
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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