# Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy

## 抄録

Transport properties of two distinct electron species in indium nitride grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity voltages were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of the two electron species, attributed to the bulk electrons and a surface accumulation layer. Single magnetic field data corresponds to neither electron species. The bulk electron distribution has an extracted average mobility of 3570 cm2/(V s) at 300 K, which rises to over 5100 cm2/(V s) at 150 K. Bulk electron concentration in the sample is $1.5 \times 10^{17}$ cm$^{-3}$. The surface electrons have a higher sheet charge density and an order of magnitude lower average mobility than those in the bulk.

## 収録刊行物

• Japanese journal of applied physics. Pt. 2, Letters

Japanese journal of applied physics. Pt. 2, Letters 45(41), L1090-L1092, 2006-10-25

Japan Society of Applied Physics

## 各種コード

• NII論文ID(NAID)
10018340901
• NII書誌ID(NCID)
AA10650595
• 本文言語コード
EN
• 資料種別
SHO
• ISSN
0021-4922
• NDL 記事登録ID
8520213
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z54-J337
• データ提供元
CJP書誌  NDL  JSAP

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