# Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy

## Abstract

Transport properties of two distinct electron species in indium nitride grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity voltages were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of the two electron species, attributed to the bulk electrons and a surface accumulation layer. Single magnetic field data corresponds to neither electron species. The bulk electron distribution has an extracted average mobility of 3570 cm2/(V s) at 300 K, which rises to over 5100 cm2/(V s) at 150 K. Bulk electron concentration in the sample is $1.5 \times 10^{17}$ cm$^{-3}$. The surface electrons have a higher sheet charge density and an order of magnitude lower average mobility than those in the bulk.

## Journal

• Jpn J Appl Phys

Jpn J Appl Phys 45(41), L1090-L1092, 2006-10-25

INSTITUTE OF PURE AND APPLIED PHYSICS

## References:  10

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## Codes

• NII Article ID (NAID)
10018340901
• NII NACSIS-CAT ID (NCID)
AA10650595
• Text Lang
EN
• Article Type
SHO
• ISSN
0021-4922
• NDL Article ID
8520213
• NDL Source Classification
ZM35(科学技術--物理学)
• NDL Call No.
Z54-J337
• Data Source
CJP  NDL  JSAP

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