Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy

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著者

    • Parish Giacinta
    • School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley WA 6009, Australia
    • Gallinat Chad S.
    • Materials Department, University of California, Santa Barbara, California 93106-5050, U.S.A.
    • Koblmüller Gregor
    • Materials Department, University of California, Santa Barbara, California 93106-5050, U.S.A.
    • Rajan Siddharth
    • Materials Department, University of California, Santa Barbara, California 93106-5050, U.S.A.
    • Bernardis Sarah
    • Materials Department, University of California, Santa Barbara, California 93106-5050, U.S.A.
    • Speck James S.
    • Materials Department, University of California, Santa Barbara, California 93106-5050, U.S.A.

抄録

Transport properties of two distinct electron species in indium nitride grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity voltages were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of the two electron species, attributed to the bulk electrons and a surface accumulation layer. Single magnetic field data corresponds to neither electron species. The bulk electron distribution has an extracted average mobility of 3570 cm2/(V s) at 300 K, which rises to over 5100 cm2/(V s) at 150 K. Bulk electron concentration in the sample is $1.5 \times 10^{17}$ cm$^{-3} $. The surface electrons have a higher sheet charge density and an order of magnitude lower average mobility than those in the bulk.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(41), L1090-L1092, 2006-10-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018340901
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8520213
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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