II-VI族化合物半導体ITO-ZnSe-CdTe-ZnTeセンサの電気特性 Electric Properties of the ITO-ZnSe-CdTe-ZnTe Photo Sensor Cell

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In this report, the ITO-ZnSe-CdTe-ZnTe cell was used for a photo sensor. ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe and CdTe layer were prepared by the vacuum deposition on this ITO, and were treated with heat at 560°C. The ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. In spite of improvement in the crystalline form, this ZnSe-CdTe sample cell has not sufficient electric current response for the light absorption of CdTe layer. In order to increase the electric current response for the light, ZnTe layer was prepared by the vacuum deposition on the ZnSe-CdTe layer, and were treated with heat at 560°C. This ITO-ZnSe-CdTe-ZnTe photo sensor cell has sufficient electric current response for the visible light and near infrared light. It is presumed that the electric filed in the CdTe layer is enough to drive the cell.

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  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 126(12), 655-661, 2006-12-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10018402613
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    8593057
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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