ＩＩ‐ＶＩ族化合物半導体ＩＴＯ‐ＺｎＳｅ‐ＣｄＴｅ‐ＺｎＴｅセンサの電気特性

• 一番ヶ瀬 剛

  大島商船高等専門学校

書誌事項

タイトル別名

• Electric Properties of the ITO-ZnSe-CdTe-ZnTe Photo Sensor Cell
• 2-6族化合物半導体ITO-ZnSe-CdTe-ZnTeセンサの電気特性
• 2 6ゾク カゴウブツ ハンドウタイ ITO ZnSe CdTe ZnTe センサ ノ デンキ トクセイ

抄録

In this report, the ITO-ZnSe-CdTe-ZnTe cell was used for a photo sensor. ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe and CdTe layer were prepared by the vacuum deposition on this ITO, and were treated with heat at 560°C. The ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. In spite of improvement in the crystalline form, this ZnSe-CdTe sample cell has not sufficient electric current response for the light absorption of CdTe layer. In order to increase the electric current response for the light, ZnTe layer was prepared by the vacuum deposition on the ZnSe-CdTe layer, and were treated with heat at 560°C. This ITO-ZnSe-CdTe-ZnTe photo sensor cell has sufficient electric current response for the visible light and near infrared light. It is presumed that the electric filed in the CdTe layer is enough to drive the cell.

収録刊行物

• 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）

  電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 126 (12), 655-661, 2006

  一般社団法人 電気学会

キーワード

• II-VI族化合物半導体，ZnTe，CdTe，ZnSe，ITO，電流輸送特性，光デバイス

詳細情報

• CRID: 1390001204462155904
• NII論文ID: 10018402613
• NII書誌ID: AN1052634X
• DOI: 10.1541/ieejsmas.126.655
• ISSN: 13475525
• ISSN: 13418939
• NDL書誌ID: 8593057
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8593057
• Web Site: http://www.jstage.jst.go.jp/article/ieejsmas/126/12/126_12_655/_pdf
• 本文言語コード: ja
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可