n-Type and Ambipolar FET Characteristics Using Pyrazinophenanthrolines Linked with Oligothiophenes
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Phenanthroline rings were used to generate n-type FET properties for the first time. A FET device based on a pyrazinophenanthroline with a quinquethiophene unit showed clear ambipolar FET characteristics.
- Chemistry Letters
Chemistry Letters 35(11), 1236-1237, 2006-11-05
The Chemical Society of Japan