n-Type and Ambipolar FET Characteristics Using Pyrazinophenanthrolines Linked with Oligothiophenes

この論文にアクセスする

この論文をさがす

著者

    • NISHIDA Jun-ichi
    • Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
    • MURAKAMI Shigeki
    • Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
    • YAMASHITA Yoshiro
    • Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

抄録

Phenanthroline rings were used to generate n-type FET properties for the first time. A FET device based on a pyrazinophenanthroline with a quinquethiophene unit showed clear ambipolar FET characteristics.

収録刊行物

  • Chemistry letters  

    Chemistry letters 35(11), 1236-1237, 2006-11-05 

    The Chemical Society of Japan

参考文献:  26件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10018404754
  • NII書誌ID(NCID)
    AA00603318
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    03667022
  • データ提供元
    CJP書誌  J-STAGE 
ページトップへ