n-Type and Ambipolar FET Characteristics Using Pyrazinophenanthrolines Linked with Oligothiophenes

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著者

    • NISHIDA Jun-ichi
    • Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
    • MURAKAMI Shigeki
    • Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
    • YAMASHITA Yoshiro
    • Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

抄録

Phenanthroline rings were used to generate n-type FET properties for the first time. A FET device based on a pyrazinophenanthroline with a quinquethiophene unit showed clear ambipolar FET characteristics.

収録刊行物

  • Chemistry letters

    Chemistry letters 35(11), 1236-1237, 2006-11-05

    The Chemical Society of Japan

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各種コード

  • NII論文ID(NAID)
    10018404754
  • NII書誌ID(NCID)
    AA00603318
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    03667022
  • データ提供元
    CJP書誌  J-STAGE 
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