絶縁ゲートAlGaN/GaN-HFETの縦型動作

• KANECHIKA Masakazu

  TOYOTA Central R&D Labs., Inc.

• SUGIMOTO Masahiro

  TOYOTA Motor Corp.

• SOEJIMA Narumasa

  TOYOTA Central R&D Labs., Inc.

• UEDA Hiroyuki

  TOYOTA Central R&D Labs., Inc.

• ISHIGURO Osamu

  TOYOTA Central R&D Labs., Inc.

• KODAMA Masahito

  TOYOTA Central R&D Labs., Inc.

• HAYASHI Eiko

  TOYOTA Central R&D Labs., Inc.

• UESUGI Tsutomu

  TOYOTA Central R&D Labs., Inc.

• KACHI Tetsu

  TOYOTA Central R&D Labs., Inc.

Bibliographic Information

Other Title

• A Vertical Operation of Insulated Gate AlGaN/GaN-HFETs

Journal

• 電気学会研究会資料. EFM, 電子材料研究会

  電気学会研究会資料. EFM, 電子材料研究会 2006 (25), 21-24, 2006-11-28

Keywords

• gallium nitride
• GaN
• insulated gate
• AlGaN
• heterojunction
• vertical
• field effect transistor

Details

• CRID: 1572543025221906560
• NII Article ID: 10018406176
• NII Book ID: AN10442556
• Text Lang: en
• Data Source:
  • CiNii Articles