Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

• Fujiwara, H

• Kimoto, T

• Tojo, T

• Matsunami, H

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 87 (5), 2005-08-01

  American Institute of Physics

詳細情報

• CRID: 1050001202107908608
• NII論文ID: 10018406283
• NII書誌ID: AA00543431
• ISSN: 00036951
• HANDLE: 2433/24192
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles