Observation of Defects in 6H-type Silicon Carbide by Cathodoluminescence Microscopy

• Isshiki Toshiyuki

  Faculty of Engineering and Design, Kyoto Institute of Technology

Bibliographic Information

Other Title

• カソードルミネッセンス法による6H-SiC結晶中の欠陥観察

Journal

• Materia Japan

  Materia Japan 45 (12), 897-897, 2006

  The Japan Institute of Metals and Materials

Keywords

• cathodohoninescence
• 6H-SiC
• crystal growth
• planer defect

Details

• CRID: 1390282679055426688
• NII Article ID: 10018422020
• NII Book ID: AN10433227
• DOI: 10.2320/materia.45.897
• ISSN: 18845843
• ISSN: 13402625
• Web Site: https://www.jstage.jst.go.jp/article/materia1994/45/12/45_12_897/_pdf
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles