高スピン分極フルホイスラー合金薄膜とスピンエレクトロニクスデバイス Highly Spin-polarized Full-Heusler Alloy Films and Their Application to Spin-electronics Devices

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  The recent development of the study on half-metallic full-Heusler alloy thin films and their application to spin-electronics devices are reviewed. The progress of preparation technique of Co-based full-Heusler alloy films with high L2<sub>1</sub> structural order has made it possible to obtain higher spin-polarization than that of typical transition metals and alloys (Co, CoFe, etc.). Resulting tunnel magnetoresistance in magnetic tunnel junctions exceeds 60% at room temperature. Our recent results on the current-perpendicular-to-plane magnetoresistance (CPP-GMR) devices with Co<sub>2</sub>MnSi films are also shown. The resistance change-area product (ΔRA) at room temperature was 19 mΩμm<sup>2</sup>, which is one order of magnitude larger than those in previously reported trilayer systems, resulting in the MR ratio of 2.4%. The enhanced ΔRA is considered to originate from the large spin polarization in a high-quality L2<sub>1</sub> Co<sub>2</sub>MnSi film.<br>

収録刊行物

  • 真空  

    真空 49(12), 700-705, 2006-12-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10018457461
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    05598516
  • NDL 記事登録ID
    8624037
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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