対向ターゲット式スパッタ法により作製した Indium-Tin-Oxide (ITO) 膜特性 Properties of Indium-Tin-Oxide (ITO) Films Deposited by a Facing Target Sputtering

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  A facing target sputtering piece of equipment was assembled to form ITO films and compare the features with those ITO films deposited using low-voltage sputtering techniques (e.g. parallel plate magnetron sputtering). The ITO films formed using the former technique showed minimum resistance at higher oxygen partial pressure regions and exhibited generally higher resistivity than those formed using parallel plate magnetron sputtering.<br>   To evaluate the degree of damage caused by ITO film deposition on organic films, tris (8-hydroxyquinoline) aluminum (Alq<sub>3</sub>) was vacuum deposited on glass substrates before ITO film formation, and the photoluminescence (PL) intensity of Alq<sub>3</sub> was compared, before and after ITO deposition. ITO film deposition using parallel plate sputtering caused 56% PL decay as compared to the reference state (before ITO film deposition), and ITO deposition using the facing target sputtering caused 36% decay, indicating the latter method was less damaging to the organic film. It also emerged that eliminating the introduction of oxygen to the facing target sputtering process could substantially suppress PL decay of the Alq<sub>3</sub> film.<br>

収録刊行物

  • 真空  

    真空 49(12), 767-770, 2006-12-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10018457679
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05598516
  • NDL 記事登録ID
    8624179
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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