CW Operation of the First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes
The first-order AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the free-standing GaN substrates by a metal organic chemical vapor deposition method. The first-order diffractive grating was formed into an n-type cladding layer. As a result, we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes under cw operation. The threshold current and the slope efficiency were 22 mA and 1.44 W/A under cw operation at 25 °C, respectively. The single longitudinal mode emission was maintained up to an output power of 60 mW. The fundamental transverse mode operation with a single longitudinal mode was observed in the temperature range from 15 to 85 °C at an output power of 20 mW.
- Japanese journal of applied physics. Pt. 2, Letters
Japanese journal of applied physics. Pt. 2, Letters 45(46), L1223-L1225, 2006-12-25
Japan Society of Applied Physics