CW Operation of the First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes

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The first-order AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the free-standing GaN substrates by a metal organic chemical vapor deposition method. The first-order diffractive grating was formed into an n-type cladding layer. As a result, we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes under cw operation. The threshold current and the slope efficiency were 22 mA and 1.44 W/A under cw operation at 25 °C, respectively. The single longitudinal mode emission was maintained up to an output power of 60 mW. The fundamental transverse mode operation with a single longitudinal mode was observed in the temperature range from 15 to 85 °C at an output power of 20 mW.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(46), L1223-L1225, 2006-12-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018460785
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8589576
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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