Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

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著者

    • Oishi Shingo Oishi Shingo
    • Division of Mathematics, Electronics and Information, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
    • Yoshida Sadafumi
    • Division of Mathematics, Electronics and Information, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan

抄録

We have simultaneously determined the carrier concentration, mobility, and thickness of 4H–SiC homoepilayers with carrier concentrations of $10^{17}$–$10^{18}$ cm-3 from infrared reflectance measurements with the wave number range of 80–2000 cm-1. A modified classical dielectric function model was employed for the fitting analyses. We have prepared $n$-type epilayers on $ p$-type and $n$-type substrates for comparison with the values of the carrier concentration and mobility estimated from infrared reflectance measurements with those obtained from Hall-effect measurements and $C$–$V$ measurements. Through these comparisons, we have confirmed the validity of the values estimated from infrared reflectance measurements.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(46), L1226-L1229, 2006-12-25 

    Japan Society of Applied Physics

参考文献:  24件

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各種コード

  • NII論文ID(NAID)
    10018460798
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8589590
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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