Fast Nanoimprint Thermal Lithography Using a Heated High-Aspect Ratio Mold
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The throughput of the thermal nanoimprint lithography is improved. The proposed process uses a high-aspect ratio mold. The mold is heated to temperatures above the glass transition temperature of the resist, and only the top part of the mold is used to press the resist. The mold press time, the resist cooling time, and the mold releasing time can be reduced. A line pattern having a width of 100 nm and a pitch of 400 nm, and a dot pattern having a diameter of 75 nm and a pitch of 200 nm were successfully transferred to the resist using SiC molds. The imprint time was 5 s.
- Jpn J Appl Phys
Jpn J Appl Phys 45(46), L1241-L1243, 2006-12-25
INSTITUTE OF PURE AND APPLIED PHYSICS