Novel Ferroelectric Gate Thin-Film Transistors Using a Polar Semiconductor Channel

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著者

    • Arai Ryota Arai Ryota
    • Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
    • Ashida Atsushi
    • Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
    • Fujimura Norifumi
    • Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan

抄録

We propose a controlled polarization type ferroelectric-gate field effect transistor (FET) which is a ferroelectric-gate FET using a polar semiconductor channel. In this device, it can be expected that the spontaneous polarization of the polar semiconductor, such as ZnO and GaN, stabilizes the spontaneous polarization of the ferroelectric film. We demonstrate two types of controlled polarization type ferroelectric-gate thin film transistors (TFTs), which are ZnO/YMnO3/Pt bottom-gate type structure and Pt/PZT/ZnO top-gate type structure. Both structures show $n$-channel type transistor operation with a non-volatile memory feature. Moreover, the Pt/PZT/ZnO structure shows better memory retention characteristics (longer than $10^{5}$ s) than the ZnO/YMnO3/Pt structure because the direction of the spontaneous polarizations of the polar semiconductor and the ferroelectric films are the same on TFTs with the ZnO/YMnO3/Pt structure. The estimated field effect mobility of these TFTs is greater than 15 cm2 V-1 s-1. These results indicate that application of the polar semiconductor overcomes the issues of ferroelectric-gate FETs, such as poor memory-retention characteristics.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(48), L1266-L1269, 2006-12-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018461009
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8589763
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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