Deposition of Cu–Ag Alloy Film by Supercritical Fluid Deposition

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Cu–Ag alloy films for microelectronics interconnects were deposited by H2 reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) [Cu(tmhd)2] and (1,5-cyclooctadiene) (hexafluoroacetylacetonato)silver(I) [Ag(hfac)(COD)] in supercritical carbon dioxide (scCO2). By varying Ag precursor concentration from 0.001 to 0.003 mol %, while keeping Cu precursor concentration constant, the maximum Ag content in the film can be adjusted from 1.2 to 7.8 at. %. Silver in the films was concentrated near the substrate, because Ag deposition could be initiated first during the deposition process. X-ray diffraction (XRD) analysis showed that a strong Cu(111) texture was formed for all the deposited films including pure Cu film. It was also found that Ag alloying by supercritical fluid deposition (SCFD) would not deteriorate surface quality of Cu film. The electrical resistivity of Cu–Ag film was determined to be between 3.7 and 5.0 μ$\Omega$$\cdot$cm.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 45(49), L1296-L1299, 2006-12-25

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018461150
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8590211
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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