書誌事項
- タイトル別名
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- Physics of Metal/Insulator Interfaces: Schottky Barrier and Atom Intermixing
- キンゾク ゼツエンタイ カイメン ノ ブツリ ショットキー バリア ト ゲンシ コンショウカ
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Recent two topics on Schottky barrier at metal/Hf-based dielectric interfaces and atom intermixing at metal/semiconductor interfaces are reviewed. We have constructed a universal theory of Schottky barriers based on a concept of generalized charge neutrality levels. This theory systematically explains barriers of various gate materials, in particular the unusual behavior of p-metals, and naturally reproduces band offsets at various semiconductor/semiconductor interfaces. On the other hand, we have clarified the mechanisms of atom intermixing at various metal/semiconductor interfaces by analyzing the thermal diffusion. It is shown that atom rebonding, screening of bonds, and strain relaxation are important factors to realize the intermixing.
収録刊行物
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- 表面科学
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表面科学 28 (1), 28-33, 2007
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390282681434888960
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- NII論文ID
- 10018461516
- 130004486352
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- NII書誌ID
- AN00334149
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- COI
- 1:CAS:528:DC%2BD2sXjtlyntb8%3D
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 8649034
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可