Surface Nano-Processes Induced by High-Speed Atomic and Molecular Beams

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  • Teraoka Yuden
    Quantum Beam Science Directorate, Japan Atomic Energy Agency

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  • 高速原子・分子ビームで誘起される表面ナノプロセス
  • コウソク ゲンシ ブンシ ビーム デ ユウキ サレル ヒョウメン ナノプロセス

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Abstract

Surface temperature and gas pressure are major parameters for control of chemical reactions between gas molecules and solid surfaces, followed by ultra-thin layers formation or etching reactions. Molecular adsorption at surfaces are occasionally induced by translational kinetic energy of incident molecules even if the incident energy is only several eV. The chemical reaction field is extended into a bulk region deeper than 10 nm if the incident energy is achieved to several keV. Thus the incident energy is the third parameter for control of chemical reactions. In this review article, generation methods of various kinds of high-speed atomic and molecular beams are briefly introduced. Especially, supersonic molecular beam techniques and neutral beam generation methods based on ion beams techniques are concretely explained. Furthermore, as an application of beam-induced surface nano-process study, etching induction at silicon surfaces by supersonic chlorine molecular beams, oxidation induction by supersonic oxygen molecular beams, and nitridation of a silicon oxide film on an Si(001) substrate at room temperature by nitrogen atomic ion beams are reviewed.

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