Si(001)表面における酸化膜形成とSiO脱離の共存機構 Mechanisms of Concurrent SiO Desorption with Oxide Layer Formation at Si(001) Surface

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著者

    • 寺岡 有殿 TERAOKA Yuden
    • (独)日本原子力研究開発機構 量子ビーム応用研究部門 Quantum Beam Science Directorate, Japan Atomic Energy Agency
    • 吉越 章隆 YOSHIGOE Akitaka
    • (独)日本原子力研究開発機構 量子ビーム応用研究部門 Quantum Beam Science Directorate, Japan Atomic Energy Agency

抄録

Oxidation reactions at Si(001) surfaces have been studied via real-time in-situ photoemission spectroscopy for chemical bonding states of Si and O atoms, and mass spectrometry for desorbing SiO molecules with synchrotron radiation and supersonic O<sub>2</sub> molecular beams in the temperature range from 900 K to 1300 K. In our previous studies, the SiO desorption yield decreased with increasing incident energy in the temperature range from 900 K to 1000 K,. In that case, the time evolutions of Si 2p photoemission spectra showed that SiO<sub>2</sub> structure on the surface was easily formed by the action of larger incident energy and the increased SiO<sub>2</sub> coverage correlated with the decreased SiO desorption yield. In this study, coincidence measurements of Si 2p photoemission spectra and SiO desorption yield revealed that the decrease of SiO correlated with the increase of Si<sup>2+</sup> component, and the SiO desorption was terminated at the oxide thickness of 0.22 nm. These facts indicate that the SiO desorption takes place at the topmost Si dimmers and its precursor is so called T site, in which O atoms are bonding with the dangling bonds of the dimmers. Consequently, M1 and M2 in the Dual-Oxide-Species (DOS) model were clarified to be T sites and Si<sup>2+</sup> states, respectively.

収録刊行物

  • 電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society  

    電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society 127(2), 133-139, 2007-02-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10018480370
  • NII書誌ID(NCID)
    AN10065950
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03854221
  • NDL 記事登録ID
    8668076
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-795
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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