MEMS技術によるX線リソグラフィーマスクの試作 [in Japanese] Fabrication of X-Ray Lithography Masks Utilizing MEMS Technology [in Japanese]
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We fabricated two kinds of Si X-ray masks only in a dry etching without electroplating and chemical etching. The first mask is a stencil X-ray mask without a membrane. An X-ray absorber of thickness 30 μm with vertical sidewalls was able to be fabricated. The second mask is an X-ray mask with a Si membrane. The thickness of the X-ray absorber and the membrane is 30 μm and 5 μm, respectively. In addition, we succeeded in demonstration of the X-ray lithography in the beam line BL-4 of the synchrotron radiation facility TERAS of AIST using the Si stencil X-ray mask. Line and space patterns with the line width 2 - 200 μm were transcribed plainly on the surface of a PMMA sheet. It was confirmed that the edge of PMMA microstructures was sharp by SEM observation.
- IEEJ Transactions on Electronics, Information and Systems
IEEJ Transactions on Electronics, Information and Systems 127(2), 167-173, 2007-02-01
The Institute of Electrical Engineers of Japan