電着法による In ドープn-CdTe半導体薄膜の作製と評価 Preparation and Characterization of Electorodeposited of In-doped CdTe Semiconductor Films

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In-doped n-CdTe thin films have been electrodeposited at -0.35V vs. Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm<sup>3</sup> (M) Cd(NO<sub>3</sub>)<sub>2</sub>, 0.5mM TeO<sub>2</sub>, and various concentration In(NO<sub>3</sub>)<sub>3</sub>. Deposited films were annealed at 350°C under N<sub>2</sub> flow. The films were characterized with X-ray diffraction, energy-dispersive X-ray spectroscopy, scanning electron microscope(SEM), and a reflectance meter. The conductivity and the carrier concentration of the films were measured using the van der Pauw method and Hall effect measurement at room temperature. This is the first study to investigate the effect of the In(NO<sub>3</sub>)<sub>3</sub> concentration on the composition, the crystallinity, and the electric properties of In doped CdTe films prepared by electrodeposition. The conductivity of the CdTe films linearly increases from 9.3 to 27.4 S/cm<sup>-1</sup>and the electron concentration [log(n/cm<sup>3</sup>)] increases from 3.9×10<sup>18</sup> to 2.8×10<sup>19</sup> cm<sup>-3</sup> as the In(NO<sub>3</sub>)<sub>3</sub> concentration rises from 1×10<sup>-2</sup> to 1×10<sup>-1</sup> M .

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  • 電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society  

    電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society 127(2), 97-102, 2007-02-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10018480897
  • NII書誌ID(NCID)
    AN10136312
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03854205
  • NDL 記事登録ID
    8668424
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-793
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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