電着法による In ドープn-CdTe半導体薄膜の作製と評価 [in Japanese] Preparation and Characterization of Electorodeposited of In-doped CdTe Semiconductor Films [in Japanese]
Access this Article
Search this Article
In-doped n-CdTe thin films have been electrodeposited at -0.35V vs. Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm<sup>3</sup> (M) Cd(NO<sub>3</sub>)<sub>2</sub>, 0.5mM TeO<sub>2</sub>, and various concentration In(NO<sub>3</sub>)<sub>3</sub>. Deposited films were annealed at 350°C under N<sub>2</sub> flow. The films were characterized with X-ray diffraction, energy-dispersive X-ray spectroscopy, scanning electron microscope(SEM), and a reflectance meter. The conductivity and the carrier concentration of the films were measured using the van der Pauw method and Hall effect measurement at room temperature. This is the first study to investigate the effect of the In(NO<sub>3</sub>)<sub>3</sub> concentration on the composition, the crystallinity, and the electric properties of In doped CdTe films prepared by electrodeposition. The conductivity of the CdTe films linearly increases from 9.3 to 27.4 S/cm<sup>-1</sup>and the electron concentration [log(n/cm<sup>3</sup>)] increases from 3.9×10<sup>18</sup> to 2.8×10<sup>19</sup> cm<sup>-3</sup> as the In(NO<sub>3</sub>)<sub>3</sub> concentration rises from 1×10<sup>-2</sup> to 1×10<sup>-1</sup> M .
- IEEJ Transactions on Fundamentals and Materials
IEEJ Transactions on Fundamentals and Materials 127(2), 97-102, 2007-02-01
The Institute of Electrical Engineers of Japan