Preparation and Characterization of Electorodeposited of In-doped CdTe Semiconductor Films

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  • 電着法によるＩｎドープｎ‐ＣｄＴｅ半導体薄膜の作製と評価
  • 電着法によるInドープn-CdTe半導体薄膜の作製と評価
  • デンチャクホウ ニ ヨル In ドープ n CdTe ハンドウタイ ハクマク ノ サクセイ ト ヒョウカ

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Abstract

In-doped n-CdTe thin films have been electrodeposited at -0.35V vs. Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm3 (M) Cd(NO3)2, 0.5mM TeO2, and various concentration In(NO3)3. Deposited films were annealed at 350°C under N2 flow. The films were characterized with X-ray diffraction, energy-dispersive X-ray spectroscopy, scanning electron microscope(SEM), and a reflectance meter. The conductivity and the carrier concentration of the films were measured using the van der Pauw method and Hall effect measurement at room temperature. This is the first study to investigate the effect of the In(NO3)3 concentration on the composition, the crystallinity, and the electric properties of In doped CdTe films prepared by electrodeposition. The conductivity of the CdTe films linearly increases from 9.3 to 27.4 S/cm-1and the electron concentration [log(n/cm3)] increases from 3.9×1018 to 2.8×1019 cm-3 as the In(NO3)3 concentration rises from 1×10-2 to 1×10-1 M .

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