Electrical Spin Injection from Out-of-Plane Magnetized FePt/MgO Tunneling Junction into GaAs at Room Temperature

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著者

    • Sinsarp Asawin Sinsarp Asawin
    • Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Manago Takashi Manago Takashi
    • Department of Electronics and Computer Science, Faculty of Science Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, Sanyo-onoda, Yamaguchi 756-0884, Japan
    • Akinaga Hiro
    • Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

抄録

We have succeeded in demonstrating zero-magnetic-field spin injection in metal–insulator–semiconductor (MIS) structure at room temperature using FePt/MgO/GaAs-based light-emitting diode heterojunction with out-of-plane magnetization. The spin polarization was investigated by spin-polarized electroluminescence (EL). The lower estimate injected at remanence was 1.5% and that injected at 1 T was reached up to 11.5%. The spin injection efficiency was estimated at least 29%. The bias dependence of the EL circular polarization showed that it decreases with increasing bias voltage for both at 1 T and at remanence.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(1), L4-L6, 2007-01-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018495234
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8621064
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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