Mechanism of Field Emission from a Highly Phosphorous-Doped Chemical Vapor Deposition Diamond (111) Surface

この論文にアクセスする

この論文をさがす

著者

抄録

The mechanism of field emission from a highly P-doped diamond (111) surface has been studied by field/photo emission electron micro-spectroscopy. It was found that field emission peaks were located at $-3$ to $-6$ eV with respect to the substrate Fermi level ($E_{\text{F}}$) and that photoemission peaks were located at $-1$ to $+2$ eV with respect to the substrate $E_{\text{F}}$. Comparing this with the knowledge of work function and electron affinity of the sample, the mechanism of field emission has been elucidated. Namely, field emitted electrons are tunnel-emitted from states around the surface $E_{\text{F}}$ and there is a large amount of resistive potential drop at the emission site.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(1), L21-L24, 2007-01-25 

    Japan Society of Applied Physics

参考文献:  15件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

被引用文献:  1件

被引用文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10018495355
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8621154
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
ページトップへ