# Mechanism of Field Emission from a Highly Phosphorous-Doped Chemical Vapor Deposition Diamond (111) Surface

## 抄録

The mechanism of field emission from a highly P-doped diamond (111) surface has been studied by field/photo emission electron micro-spectroscopy. It was found that field emission peaks were located at $-3$ to $-6$ eV with respect to the substrate Fermi level ($E_{\text{F}}$) and that photoemission peaks were located at $-1$ to $+2$ eV with respect to the substrate $E_{\text{F}}$. Comparing this with the knowledge of work function and electron affinity of the sample, the mechanism of field emission has been elucidated. Namely, field emitted electrons are tunnel-emitted from states around the surface $E_{\text{F}}$ and there is a large amount of resistive potential drop at the emission site.

## 収録刊行物

• Japanese journal of applied physics. Pt. 2, Letters

Japanese journal of applied physics. Pt. 2, Letters 46(1), L21-L24, 2007-01-25

Japan Society of Applied Physics

## 各種コード

• NII論文ID(NAID)
10018495355
• NII書誌ID(NCID)
AA10650595
• 本文言語コード
EN
• 資料種別
SHO
• ISSN
0021-4922
• NDL 記事登録ID
8621154
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z54-J337
• データ提供元
CJP書誌  CJP引用  NDL  JSAP

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