Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge2Sb2Te5 and Sb2Te3)
Phase change memory (PCM) cells with monolayer chalcogenide film (Ge2Sb2Te5 or Sb2Te3) and doublelayer chalcogenide films (Ge2Sb2Te5 and Sb2Te3) were successfully fabricated. The PCM cell with doublelayer structure like W/Ge2Sb2Te5(30 nm)/Sb2Te3(60 nm)/TiN/Al shows superior performances to monolayer ones, which is mostly referred to the reduction of set voltage value and reset voltage value, and the ability of multilevel data storage. Theoretical simulations of the temperature distribution of the PCM cell with the doublelayer structure were also investigated.
- Japanese journal of applied physics. Pt. 2, Letters
Japanese journal of applied physics. Pt. 2, Letters 46(2), L25-L27, 2007-01-25
Japan Society of Applied Physics