Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge2Sb2Te5 and Sb2Te3)

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著者

    • Rao Feng Rao Feng
    • Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Song Zhitang Song Zhitang
    • Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Zhong Min [他] Zhong Min
    • Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Wu Liangcai
    • Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Feng Gaoming
    • Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Liu Bo
    • Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Feng Songlin
    • Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Chen Bomy
    • Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A.

抄録

Phase change memory (PCM) cells with monolayer chalcogenide film (Ge2Sb2Te5 or Sb2Te3) and doublelayer chalcogenide films (Ge2Sb2Te5 and Sb2Te3) were successfully fabricated. The PCM cell with doublelayer structure like W/Ge2Sb2Te5(30 nm)/Sb2Te3(60 nm)/TiN/Al shows superior performances to monolayer ones, which is mostly referred to the reduction of set voltage value and reset voltage value, and the ability of multilevel data storage. Theoretical simulations of the temperature distribution of the PCM cell with the doublelayer structure were also investigated.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(2), L25-L27, 2007-01-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018495371
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8621167
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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