Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes

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著者

    • Miura Koji Miura Koji
    • Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
    • Plumwongrot Dhanorm
    • Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
    • Ohira Kazuya
    • Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
    • Maruyama Takeo
    • Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
    • Arai Shigehisa
    • Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan

抄録

We demonstrate 1540-nm-wavelength GaInAsP/InP distributed feedback lasers, consisting of multiple-quantum-wire active regions with a wire width of 30 nm, fabricated by electron-beam lithography, CH4/H2 reactive ion etching, and two-step organometallic vapor-phase-epitaxial growth processes. By adopting low-damage fabrication processes for high-mesa stripe structures, a threshold current as low as 2.1 mA, which corresponds to a threshold current density of 176 A/cm2, and a differential quantum efficiency of 16%/facet were obtained under room-temperature continuous-wave conditions. A sub-mode suppression-ratio of 50 dB at a bias current of twice the threshold was also achieved.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(2), L34-L36, 2007-01-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018495421
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8621209
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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