Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes
We demonstrate 1540-nm-wavelength GaInAsP/InP distributed feedback lasers, consisting of multiple-quantum-wire active regions with a wire width of 30 nm, fabricated by electron-beam lithography, CH4/H2 reactive ion etching, and two-step organometallic vapor-phase-epitaxial growth processes. By adopting low-damage fabrication processes for high-mesa stripe structures, a threshold current as low as 2.1 mA, which corresponds to a threshold current density of 176 A/cm2, and a differential quantum efficiency of 16%/facet were obtained under room-temperature continuous-wave conditions. A sub-mode suppression-ratio of 50 dB at a bias current of twice the threshold was also achieved.
- Japanese journal of applied physics. Pt. 2, Letters
Japanese journal of applied physics. Pt. 2, Letters 46(2), L34-L36, 2007-01-25
Japan Society of Applied Physics