On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors

この論文をさがす

著者

    • Fu Ssu-I FU Ssu-I
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
    • TSAI Yan-Ying
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
    • HUNG Ching-Wen
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
    • LIU Wen-Chau
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 46(1), L74-L76, 2007-01-25

    Japan Society of Applied Physics

参考文献:  10件中 1-10件 を表示

  • <no title>

    LIN Y. S.

    Jpn. J. Appl. Phys. 36, 2007, 1997

    被引用文献1件

  • <no title>

    LIN Y. S.

    Semicond. Sci. Technol. 21, 303, 2006

    被引用文献1件

  • <no title>

    CHEN C. Y.

    IEEE Trans. Electron Devices 51, 1963, 2004

    被引用文献1件

  • <no title>

    TAN S. W.

    Superlattices Microstruct 37, 401, 2005

    被引用文献1件

  • <no title>

    HUANG C. E.

    IEEE Electron Device Lett. 23, 576, 2002

    被引用文献1件

  • <no title>

    CHENG S. Y.

    Semicond. Sci. Technol. 17, 701, 2002

    被引用文献1件

  • <no title>

    CHENG S. Y.

    J. Vac. Sci. Technol. B 22, 1699, 2004

    被引用文献1件

  • <no title>

    LOUR W. S.

    Semicond. Sci. Technol. 13, 847, 1998

    被引用文献1件

  • Analysis of the current gain for AlGaAs/GaAs HBT

    TIWARI S.

    IEEE Trans. Electron Dev. 36, 2105-2121, 1989

    被引用文献4件

  • <no title>

    LIU W.

    Solid-State Electron 34, 1119, 1991

    被引用文献1件

各種コード

  • NII論文ID(NAID)
    10018495646
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    00214922
  • NDL 記事登録ID
    8621510
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL 
ページトップへ