On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors

• Ssu-I Fu

• Shiou-Ying Cheng

• Po-Hsien Lai

Bibliographic Information

Other Title

• On the Emitter Ledge Length Effect for InGaP GaAs Heterojunction Bipolar Transistors

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 46 (1-3), L74-76, 2007-01

  Tokyo : Japan Society of Applied Physics

Keywords

• potential saddle point
• recombination rate
• electron density

Details

• CRID: 1520291855700467328
• NII Article ID: 10018495646
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 8621510
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8621510
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles